A Critical Study of Gallium Nitride-Based Digital Technology

A careful physical design, namely, layout, can convert the design into tangible devices without fabrication problems. The horseshoe-shaped gate and the design rule of thumb were proposed in the physical design and two mask sets were fabricated. Keys to the fabrication of GaN BGJFETs may be the device-quality material and the stable fabrication technology as well as the masks. The difficulties and achievements in the growth of n-GaN and p-GaN films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The p-GaN films were grown in Ga-rich regime in order to obtain excellent surface morphology as well as high doping concentration. For the fabrication of BGJFETs, two-step etching was adopted to minimize plasma-induced etch damage. Ohmic contact issues for n-GaN and p-GaN were also discussed. Finally, the test results of the preliminary BGJFETs were discussed with the future expectations and recommendations.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Park, Chul-Woo

Contributors dc:contributor

• Kim, Kyekyoon

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI3131000

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80863