Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 58 for “"Doping concentration"”.
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Power scaling of Tm:YLF-pumped Ho:YAG lasers
… requirements on the thulium doping concentration in Tm:YLF provided motivation for the preliminary experiments of laser performance characterisation to find the optimum doping concentration. The optimum doping concentration is defined as that which gives the highest output …
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Planar Tunneling Into YBCMO (M = Zinc, Nickel) Thin Films
… as a function of crystallographic orientation, doping concentration, temperature and applied magnetic field. Tunnel junctions are fabricated with either Bi or Pb as a counter-electrode, ex-situ, on thin films grown by off-axis DC magnetron sputter deposition from single stoichiometric targets. …
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A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
… thickness for both devices. Even though higher doping concentration is good for suppressing short channel effects, the lower doping concentration is desirable as both devices inhibit higher on-state currents. Gate-All�Around has greater value of current ratio compared to Double-Gate with 99.99% …
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Optimization of the front end of CDTE solar cells
… the atomic Mg content (x), thickness (t), and doping concentration (n) can play important roles on the performance of CdTe solar cells. In this dissertation, systematic simulation, by solar cell capacitance simulator (SCAPS), and experiments are used to investigate the influences of these …
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Hydrothermal synthesis of Al-doped ZnO nanowires and their application for photovoltaic devices
… the electrical properties of ZnO nanowires, Al doping of hydrothermally synthesized ZnO nanowires is studied along with the optimization of doping concentration. The morphology of ZnO nanowire arrays is also studied as a function of the doping concentration in the growth solution. Finally, …
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Design and fabrication of vertical external cavity surface-emitting lasers
… epitaxial structures have a variation in their doping concentration profile in the p-type distributed Bragg reflector mirrors, to examine the tradeoff in their electrical and optical properties. This tradeoff is integral to both the VCSEL and VECSEL designs. A simulation of the VCSEL devices is …
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Ultra Low Power SubThreshold Device Design Using New Ion Implantation Profile
… aspects of integrated circuit design is doping profile of a transistor along its length, width and depth. Devices for super-threshold circuit usually employ halo and retrograde doping profiles in the channel to eliminate many unwanted effects like DIBL, short channel effect, threshold …
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Model of reflectance of thermophotovoltaic cell and cold plate
… data is needed to fully integrate the effect of doping concentration (using the Drude model) into these reflectance calculations.
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Nonthemal plasma synthesis of indium phosphide nanocrystals and electrical properties of doped silicon nanocrystal films.
… silicon NCs were studied as a function of the doping concentration. Indium phosphide nanocrystals (InP NCs) were synthesized using a nonthermal plasma. The NCs were synthesized using a simple capacitively coupled plasma where the precursors are flowed through a 3/8” quartz tube with two outer …
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Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C
… showed that the growth temperature and the doping concentration influence the position, broadening, and asymmetry of the longitudinal-optical phonon Raman line. We attribute these effects to changes in the concentration of interstitial carbon in the films. Also, the shift of the Raman line …
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Solution-processed doping in CdTe thin film solar cells
… and high resistivities in CdTe devices. Doping CdTe is a necessary way to improve device performance. In this work, it is demonstrated that a cost-effective solution-processed Group I and Group V doping in CdTe thin film solar cells allows for efficiency increases and stability …
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Modeling of Charge Carrier Transport in Photoetching of Gallium Arsenide
… diffusion coefficient of hole and electrons, doping concentration, light intensity, wavelength, and the recombination length. The sensitivity analysis technique facilitated the identification of the parameters for which the behavior of this complex, nonlinearly coupled system is most sensitive.
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Cryogenic optical refrigeration
… of the Stark manifold resonance and high doping concentration available in a crystalline host. Cooling to \u223c155K from room temperature in a single stage with a cooling power of 90mW has been achieved, outperforming multi-stage Peltier coolers. Further cooling below the NIST-defined …
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A Critical Study of Gallium Nitride-Based Digital Technology
… excellent surface morphology as well as high doping concentration. For the fabrication of BGJFETs, two-step etching was adopted to minimize plasma-induced etch damage. Ohmic contact issues for n-GaN and p-GaN were also discussed. Finally, the test results of the preliminary BGJFETs were …
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Cryogenic optical refrigeration: Laser cooling of solids below 123 K
… of the Stark manifold resonance and high doping concentration available in a crystalline host, outperforming multi-stage Peltier coolers. A novel technique probing local temperature changes experimentally verifies the cooling efficiency model with expected cooling to 93 K with the current …
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A two-dimensional numerical model of the high electron mobility transistor
… this model, the spatial spread of the electron concentration in the quantum well normal to the heterojunction is taken into consideration by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an …
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Post-crystallisation treatment and characterisation of polycrystalline silicon thin-film solar cells on glass
… We find that the ratio of ECV to Hall average doping concentration for most of our poly-Si films lies in the range of 1.6 to 2.2. Cross-sectional electron beam-induced current measurements reveal that the p-n junction of our textured samples is disrupted and non-conformal due to the texture …
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Strain sensor array using printed single crystalline silicon on plastic substrate
… discusses the effect of temperature and doping concentration, introduces a newly developed strain gauge using single crystalline silicon on plastic substrate, and describes the Colpitts oscillator that has the potential of wireless data transmission between sensor and data acquisition …
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Optical loss and high-speed modulation of vertical-cavity surface-emitting lasers
… diameters, the effects of varying the impurity doping concentration in the distributed Bragg reflector (DBR) mirrors of the VCSEL on its maximum power, current threshold, and slope efficiency are examined. By optimizing the amount of impurity doping distributed in the mirrors, improved …
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Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy
… lateral p-n junctions were achieved by ex-situ doping on thin film or in-situ doping of vertical nanowire (NW). However, fabricating lateral junctions on thin film are less effective due to the difficulties in defining abrupt junction geometry and escaping physical damages from the post-doping …
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