High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices

We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best of the authors' knowledge, this is the highest ever-reported value of gm for AlGaN/GaN HEMTs. Also, an fT of 107 GHz is the highest data for similar gate-length devices.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Khan, Farid Ahmed

Contributors dc:contributor

• I. Adesida

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3130951

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80857