Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 45 for “"drain current"”.
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Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation
… the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top …
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Atomic layer deposition Al2O3-passivated AlGaN/GaN high-electron-mobility transistors on Si(111) towards reliable high-speed electronics
… (Al)GaN surfaces, and reducing leakage currents are of great importance. In this dissertation, these challenges are individually addressed along with respective detailed studies. It is shown that a low GaN in-plane tensile strain allows a higher 2D electron gas mobility due to the …
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Power and performance optimization of negative capacitance transistor circuits
… low sub-threshold slopes and enhanced drain-currents. Therefore, NCFET tremendously reduces power consumption by enabling extremely low voltage operation. Whereas the enhanced current behavior of NCFET enables extremely high-performance improvement. The NCFET characteristics depend on …
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Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
… Through investigating various voltage, current, and temperature stress levels, we have identified one recoverable degradation mechanism as well as three permanent degradation mechanisms. Under high drain voltage, hot-electron trapping results in temporary drain current decrease and drain …
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Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition
… indium composition in the channel, the drain current peak-to-valley ratio, at room temperature, is increased from 1.7 in GaAs electron channel devices to over 1200 in ln$\sb{0.22}$Ga$\sb{0.78}$As electron channel devices.
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Broadband mm-wave signal generation and amplification in CMOS using synthetic impedance
… the appropriate phase relationship between the drain voltage and drain current of a MOS transistor. A high frequency, wide tuning range 105-121GHz oscillator and a small-footprint 20-40GHz oscillator using synthetic resonance are presented. The concept of impedance synthesis is also used to …
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High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
… exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best of the authors' knowledge, this is the highest ever-reported value of gm for …
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Trap modelling and injection effects in GaN power devices
… GaN-type gate. It was found that the decrease in drain current associated with the substrate coupling effect is virtually suppressed, if sufficient holes are injected from the gate. The voltage and time dependencies of the drain current recovery were also investigated, and it was concluded that, …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
… meet. Moreover, the permanent decrease of the drain current is directly linked with the formation of the surface pits, while the permanent increase of the gate current is found to be uncorrelated with the structural degradation. The second part of the thesis, Chapters 4 and 5, identifies …
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Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
… sequential degradation mechanisms where the gate current degrades first and saturates only after which the drain current shows significant degradation. A study of the semiconductor surface of delaminated degraded devices shows formation of grooves and pits at the gate edge on the drain side. …
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Investigation of Surface States and Device Surface Charging in Nitride Materials Using Scanning Kelvin Probe Microscopy
… of band bending for a bias that caused no current flow through the device was similar to a bias that did. This showed that hot electron injection from the channel did not play a significant role in increasing surface band bending. The accumulated charge near the gate edge of a HFET can …
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Degradation mechanisms of GaN high electron mobility transistors
… stress on devices results in an increase in drain resistance RD and a decrease in maximum drain current IDmax. During the stress, traps are found to be generated. We have seen that this degradation is driven mostly by electric field, and current is less relevant to electrical degradation.
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A two-dimensional numerical model of the high electron mobility transistor
… Boltzmann transport equation in the form of a current continuity equation and an energy transport equation is solved to obtain the transient transport behavior. Transport of carriers takes place in two layers in the GaAs region: the lowest subband of the quantum well and a non-quantized bulk …
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Fabrication and characterization of AIGaN/GaN HEMTs
… epilayer designs have been fabricated. A maximum drain current of 800mA/mm and a peak transconductance of 165mS/mm was achieved with the first HEMT design compared to 500mA/mm and 106mS/mm for the second HEMT design. Long-term heat treatment on the HEMT was found to degrade the surface morphology …
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Nanowire Zinc Oxide MOSFET Pressure Sensor
… MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using …
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Electroluminescence in ion gel gated organic polymer semiconductor transistors
… semiconductor transistors emit light when the drain source voltage is swept slightly beyond the energy gap of the polymer divided by the elementary charge (Vds > Eg/e). In particular, the light emission in poly(9,9'-dioctylfluorene-co-benzothiadiazole) (F8BT) polymer semiconductor, with …
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Efficiency Improvement of WCDMA Base Station Transmitters using Class-F power amplifiers
… generated. By doing this, a square wave drain voltage and a peaked half-sinusoidal drain current out-of-phase by 180 are produced. Since only a drain voltage or a drain current exists at any given time, the power dissipation is ideally zero resulting in 100% theoretical efficiency. These …
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The insulated gate field effect transistor (IGFET) as a microluminometer
… the FET, i.e., the modulation of the source to drain current, they also show that the IGFET's light sensitivity is not a simple photodiode response of the source/base or drain/base junction. This work raises many interesting questions to be answered by future studies concerning the light …
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Design, Fabrication, Testing of CNT Based ISFET and Characterization of Nano/Bio Materials Using AFM
… scratched in the area between the source and drain of the FET where the inversion layer is after the ISFET is activated. Thus, a bundle of CNTs are able to be aligned inside a single nanochannel by Dielectrophoresis (DEP) and the drain current is improved greatly due to CNTs` remarkable and …
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Accelerated thermal degradation testing of GAN HEMTs under high-temperature stress
… within a thermal chamber at 150 °C under high-current stress. An external circuit is connected to the switch node of the HEMT device to record on-state drain-source voltage, VDS (on), across a shunt resistor and the corresponding drain current, enabling the calculation of on-state drain-source …
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