Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition

Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2 x 1010/cm2 for a 50-A GaAs coupling barrier (QW to QD) to 3 x 1010/cm2 for a 5-A barrier. The improved QD density and uniformity, as well as improved carrier collection, make possible room-temperature continuous-wave (cw) QD + QW laser operation (a single InAs QD layer) at reasonable diode length (∼1 mm), current density 586 A/cm2, and wavelength 1057 nm. QW-assisted single-layer InAs QD laser, a QD + QW laser, is demonstrated that operates cw (300 K), and at diode length 150 mum in pulsed operation exhibits gain as high as ∼100 cm-1. The cw 300-K coupled InAs QD and InGaAs QW AlGaAs-GaAs-InGaA-InAs heterostructure lasers are grown by metalorganic chemical vapor deposition.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Chung, Theodore

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI3101818

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80831