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Showing 1 to 5 of 5 for “"AlGaAs-GaAs-InGaAs"”.
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Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers
"Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and …
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Crecimiento por MBE, fabricación y caracterización de láseres de AlGaAs/GaAs/InGaAs/GaAs (111B) para emisión óptica menor a 1 nanometro
… de Haces Moleculares (MBE) de estructuras de AlGaAS/GaAS/InGaAS de baja dimensionalidad sobre substratos de GaAs (111)B con vistas a su aplicación en el desarrollo de dispositivos optoelectrónicos de configuración guía-onda conlongitudes de onda de trabajo mayores a 1 um, con especial atención …
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Coupled Quantum Well to Quantum Dot Heterostructure Laser
… advantageous to locate strain-matching auxiliary InGaAs layers QWs within tunneling distance of a single QD layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. (Abstract shortened by UMI.).
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Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical …
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Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition
… advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed …