A Comprehensive Study of Hybrid Vertical -Cavity Surface -Emitting Lasers

The high frequency modulation response for hybrid VCSELs is measured and compared to the theoretical response of the VCSEL derived through small signal analysis, with good agreement. For the two single mode structure wafers measured, the VCSELs with the implant aperture located farther away from the active region had the better response. The capacitance of the high speed structure VCSEL, where a deep (through the active region) and wide implant is used to reduce charge buildup underneath the oxide layers, and hence capacitance, is smaller than the capacitances of the other wafers due to reduction in the oxide capacitance. However, the capacitance of all the VCSEL wafers was increased because of the area of the bottom contact mesa and the photoresist bridge. (Abstract shortened by UMI.).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Young, Erik William

Contributors dc:contributor

• Chuang, Shun-Lien
• Choquette, Kent D.

• Physics, Optics

Language dc:language

eng

Identifier

(MiAaPQ)AAI3070487

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80808