{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80808"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80808","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"A Comprehensive Study of Hybrid Vertical -Cavity Surface -Emitting Lasers","abstract":"The high frequency modulation response for hybrid VCSELs is measured and compared to the theoretical response of the VCSEL derived through small signal analysis, with good agreement. For the two single mode structure wafers measured, the VCSELs with the implant aperture located farther away from the active region had the better response. The capacitance of the high speed structure VCSEL, where a deep (through the active region) and wide implant is used to reduce charge buildup underneath the oxide layers, and hence capacitance, is smaller than the capacitances of the other wafers due to reduction in the oxide capacitance. However, the capacitance of all the VCSEL wafers was increased because of the area of the bottom contact mesa and the photoresist bridge. (Abstract shortened by UMI.).","abstract_html":"The high frequency modulation response for hybrid VCSELs is measured and compared to the theoretical response of the VCSEL derived through small signal analysis, with good agreement. For the two single mode structure wafers measured, the VCSELs with the implant aperture located farther away from the active region had the better response. The capacitance of the high speed structure VCSEL, where a deep (through the active region) and wide implant is used to reduce charge buildup underneath the oxide layers, and hence capacitance, is smaller than the capacitances of the other wafers due to reduction in the oxide capacitance. However, the capacitance of all the VCSEL wafers was increased because of the area of the bottom contact mesa and the photoresist bridge. (Abstract shortened by UMI.).","abstract_has_math":false,"creators":["Young, Erik William"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Chuang, Shun-Lien","Choquette, Kent D."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:16Z","date_published":"2015-09-25T20:08:16Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Physics, Optics"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3070487"],"render_values":[{"text":"(MiAaPQ)AAI3070487","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80808","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chuang, Shun-Lien","Choquette, Kent D."]},{"key":"dc:creator","label":"Author","values":["Young, Erik William"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:16Z","10000-01-01","2002"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Optics"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80808","(MiAaPQ)AAI3070487"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The high frequency modulation response for hybrid VCSELs is measured and compared to the theoretical response of the VCSEL derived through small signal analysis, with good agreement. For the two single mode structure wafers measured, the VCSELs with the implant aperture located farther away from the active region had the better response. The capacitance of the high speed structure VCSEL, where a deep (through the active region) and wide implant is used to reduce charge buildup underneath the oxide layers, and hence capacitance, is smaller than the capacitances of the other wafers due to reduction in the oxide capacitance. However, the capacitance of all the VCSEL wafers was increased because of the area of the bottom contact mesa and the photoresist bridge. (Abstract shortened by UMI.).","Made available in DSpace on 2015-09-25T20:08:16Z (GMT). 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For the two single mode structure wafers measured, the VCSELs with the implant aperture located farther away from the active region had the better response. The capacitance of the high speed structure VCSEL, where a deep (through the active region) and wide implant is used to reduce charge buildup underneath the oxide layers, and hence capacitance, is smaller than the capacitances of the other wafers due to reduction in the oxide capacitance. However, the capacitance of all the VCSEL wafers was increased because of the area of the bottom contact mesa and the photoresist bridge. (Abstract shortened by UMI.).","Made available in DSpace on 2015-09-25T20:08:16Z (GMT). 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