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University of Illinois at Urbana-Champaign
Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications
Abstract
dc:descriptionTo identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Huang, JianJang
- Contributors dc:contributor
-
- Feng, Milton
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3070328
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80792