{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80792"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80792","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications","abstract":"To identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.","abstract_html":"To identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.","abstract_has_math":false,"creators":["Huang, JianJang"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:11Z","date_published":"2015-09-25T20:08:11Z","updated_at":"2026-07-22T22:26:14Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3070328"],"render_values":[{"text":"(MiAaPQ)AAI3070328","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80792","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Huang, JianJang"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:11Z","10000-01-01","2002"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80792","(MiAaPQ)AAI3070328"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["To identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.","Made available in DSpace on 2015-09-25T20:08:11Z (GMT). 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We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.","Made available in DSpace on 2015-09-25T20:08:11Z (GMT). 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