Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors

Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique small-signal model extraction procedure was developed and used to study base resistance scaling in submicron HBTs. A measurement-based analysis technique was developed to quantitatively describe the current spreading phenomenon in submicron InP HBTs for the first time. These results suggest that additional device scaling along with improvements in epitaxial materials should lead to further progress in the development of high-speed, low power electronics using InP-based HBTs.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Hattendorf, Michael Leonard

Contributors dc:contributor

• Feng, Milton

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3070321

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80791