{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80791"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80791","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors","abstract":"Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique small-signal model extraction procedure was developed and used to study base resistance scaling in submicron HBTs. A measurement-based analysis technique was developed to quantitatively describe the current spreading phenomenon in submicron InP HBTs for the first time. These results suggest that additional device scaling along with improvements in epitaxial materials should lead to further progress in the development of high-speed, low power electronics using InP-based HBTs.","abstract_html":"Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique small-signal model extraction procedure was developed and used to study base resistance scaling in submicron HBTs. A measurement-based analysis technique was developed to quantitatively describe the current spreading phenomenon in submicron InP HBTs for the first time. These results suggest that additional device scaling along with improvements in epitaxial materials should lead to further progress in the development of high-speed, low power electronics using InP-based HBTs.","abstract_has_math":false,"creators":["Hattendorf, Michael Leonard"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Feng, Milton"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:11Z","date_published":"2015-09-25T20:08:11Z","updated_at":"2026-07-22T22:26:14Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3070321"],"render_values":[{"text":"(MiAaPQ)AAI3070321","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80791","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton"]},{"key":"dc:creator","label":"Author","values":["Hattendorf, Michael Leonard"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:11Z","10000-01-01","2002"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80791","(MiAaPQ)AAI3070321"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. 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