Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications

The second technique uses a novel approach: very-low temperature molecular beam epitaxy (VLT-MBE) which involves growth of amorphous and polycrystalline materials. Using GaP and laterally oxidized AlAs materials, substrate independent DBRs were fabricated at wavelengths in both the visible spectrum, 480 nm to 550 nm, as well as those used in the telecommunications industry, 1310 nm to 1550 nm. In addition, VLTMBE-grown InGaP was used as a protection layer during post-growth oxidation processes. These InGaP layers were used to protect the In0.25Ga0.75As layers, mentioned above, during the lateral oxidation relaxation process. The VLT-grown InGaP films were found to be superior to other protection layers, such as SiNx and SiO 2, due to their ability to allow dislocation reduction during the oxidation process. Because of the nature of the VLT-grown materials, they can be used in any material system using a variety of host-substrates, making this growth technique highly adaptable and useful.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Pickrell, Gregory William

Contributors dc:contributor

• Cheng, K.Y.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3044200

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80769