Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 5 of 5 for “"Dislocation Reduction"”.
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Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
… as SiNx and SiO 2, due to their ability to allow dislocation reduction during the oxidation process. Because of the nature of the VLT-grown materials, they can be used in any material system using a variety of host-substrates, making this growth technique highly adaptable and useful.
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High mobility strained Si/SiGe heterostructure MOSFETs : channel engineering and virtual substrate optimization
… onto silicon substrates. In this thesis, dislocation dynamics in compositionally graded SiGe layers are explored and mobility enhancements in strained Si/SiGe metal-oxide-semiconductor field-effect transistors (MOSFETs) are evaluated. These results demonstrate the dramatic increases in …
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LARGE-AREA, WAFER-SCALE EPITAXIAL GROWTH OF GERMANIUM ON SILICON AND INTEGRATION OF HIGH-PERFORMANCE TRANSISTORS
… growth technique, we have investigated possible dislocation locking mechanisms by dopant impurities, coupled with artificially introduced oxygen. In the case of n-type Ge grown on Si, our materials characterization indicates that the dislocation density (DD) can reach the \uf07e105 cm-2 level, …
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Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices
… not yet well established. III-V solar cell cost reduction and direct Si/III-V integration can both be realized by depositing a thin layer (e.g. 1 [mu]m) of high quality Ge on relatively inexpensive Si substrates for which the decreased cost is due to Si's greater material abundance and larger …