Back to results
University of Illinois at Urbana-Champaign
Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process
Abstract
dc:descriptionLong channel transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Faulkner, Carl McCarty
- Contributors dc:contributor
-
- Tucker, John R.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3030431
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80748