Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces

To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Luh, Dah-An

Contributors dc:contributor

• T.-C. Chiang

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(MiAaPQ)AAI9971127

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80681