{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80681"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80681","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces","abstract":"To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.","abstract_html":"To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.","abstract_has_math":false,"creators":["Luh, Dah-An"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["T.-C. Chiang"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:03:36Z","date_published":"2015-09-25T20:03:36Z","updated_at":"2026-07-22T22:26:14Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9971127"],"render_values":[{"text":"(MiAaPQ)AAI9971127","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80681","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["T.-C. 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The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.","Made available in DSpace on 2015-09-25T20:03:36Z (GMT). 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Chiang"],"dc:creator":["Luh, Dah-An"],"dc:date":["2015-09-25T20:03:36Z","10000-01-01","2000"],"dc:description":["To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.","Made available in DSpace on 2015-09-25T20:03:36Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9971127.pdf: 4604556 bytes, checksum: 148d55a3d47db6235e430157a8c27f69 (MD5) Previous issue date: 2000","Embargo set by: Seth Robbins for item 81963 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","109 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000."],"dc:identifier":["http://hdl.handle.net/2142/80681","(MiAaPQ)AAI9971127"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces"],"dc:type":["text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:14Z"}