Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon

We investigate two pathways for SiH3 incorporation into growing a-Si:H. It has been thought that growth proceeds by H abstraction by atomic H or SiH3. Recently, a mechanism of direct insertion of SiH3 into a surface Si-Si bond has been proposed to explain new IR data. We determine the activation energies for key steps in these pathways, and discuss the validity of each in light of our results.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Kilian, Karland Arthur

Contributors dc:contributor

• Adams, James B.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9921704

OAI record oai:identifier

https://www.ideals.illinois.edu/oai-pmh?verb=GetRecord&metadataPrefix=etdms&identifier=oai%3Awww.ideals.illinois.edu%3A2142%2F80666