Interfacial Studies of Buried Semiconductor Surfaces

"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\times$ 1) interfacial structure. These studies were performed in the traditional ""Bragg"" or reflection geometry. The use of the ""Laue"" or transmission geometry for similar structural studies was also evaluated."

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Aburano, Richard Dean

Contributors dc:contributor

• Chiang, Tai-Chang

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9737028

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80642