{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80642"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80642","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Interfacial Studies of Buried Semiconductor Surfaces","abstract":"\"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\\times$ 1) interfacial structure. These studies were performed in the traditional \"\"Bragg\"\" or reflection geometry. The use of the \"\"Laue\"\" or transmission geometry for similar structural studies was also evaluated.\"","abstract_html":""X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\\times$ 1) interfacial structure. These studies were performed in the traditional ""Bragg"" or reflection geometry. The use of the ""Laue"" or transmission geometry for similar structural studies was also evaluated."","abstract_has_math":true,"creators":["Aburano, Richard Dean"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Chiang, Tai-Chang"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:03:25Z","date_published":"2015-09-25T20:03:25Z","updated_at":"2026-07-22T22:26:14Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9737028"],"render_values":[{"text":"(MiAaPQ)AAI9737028","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80642","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chiang, Tai-Chang"]},{"key":"dc:creator","label":"Author","values":["Aburano, Richard Dean"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:03:25Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80642","(MiAaPQ)AAI9737028"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\\times$ 1) interfacial structure. These studies were performed in the traditional \"\"Bragg\"\" or reflection geometry. The use of the \"\"Laue\"\" or transmission geometry for similar structural studies was also evaluated.\"","Made available in DSpace on 2015-09-25T20:03:25Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737028.pdf: 10046338 bytes, checksum: 2daac1ef01f1526d4056f8309c2c9650 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 81924 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","175 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."]},{"key":"dc:title","label":"Title","values":["Interfacial Studies of Buried Semiconductor Surfaces"]}]}],"canonical_facts":{"dc:contributor":["Chiang, Tai-Chang"],"dc:creator":["Aburano, Richard Dean"],"dc:date":["2015-09-25T20:03:25Z","10000-01-01","1997"],"dc:description":["\"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\\times$ 1) interfacial structure. These studies were performed in the traditional \"\"Bragg\"\" or reflection geometry. The use of the \"\"Laue\"\" or transmission geometry for similar structural studies was also evaluated.\"","Made available in DSpace on 2015-09-25T20:03:25Z (GMT). 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