Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells

Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Bassett, Kevin Paul

Contributors dc:contributor

• Li, Xiuling
• Lyding, Joseph W.
• Carney, Paul S.
• Dragic, Peter D

• nanowire
• epitaxy
• metalorganic chemical vapor deposition (MOCVD)
• compound semiconductors

Statement dc:rights

• Copyright 2015 Kevin Paul Bassett

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/78768

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/78768