{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/78768"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/78768","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells","abstract":"Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.","abstract_html":"Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.","abstract_has_math":false,"creators":["Bassett, Kevin Paul"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Li, Xiuling","Lyding, Joseph W.","Carney, Paul S.","Dragic, Peter D"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-07-22T22:45:47Z","date_published":"2015-07-22T22:45:47Z","updated_at":"2026-07-22T22:26:12Z","subjects":["nanowire","epitaxy","metalorganic chemical vapor deposition (MOCVD)","compound semiconductors"],"languages":["en"],"rights":["Copyright 2015 Kevin Paul Bassett"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/78768","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Li, Xiuling","Lyding, Joseph W.","Carney, Paul S.","Dragic, Peter D"]},{"key":"dc:creator","label":"Author","values":["Bassett, Kevin Paul"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-07-22T22:45:47Z","2017-07-23T09:15:25Z","2015-05","2015-04-22","2015-5"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["nanowire","epitaxy","metalorganic chemical vapor deposition (MOCVD)","compound semiconductors"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2015 Kevin Paul Bassett"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/78768"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2017-05-01","The student, Kevin Bassett, accepted the attached license on 2015-04-21 at 18:34.","The student, Kevin Bassett, submitted this Dissertation for approval on 2015-04-21 at 18:46.","This Dissertation was approved for publication on 2015-04-22 at 16:43.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8003 on 2015-07-22 at 14:26:02","Made available in DSpace on 2015-07-22T22:45:47Z (GMT). No. of bitstreams: 2 BASSETT-DISSERTATION-2015.pdf: 18239038 bytes, checksum: 0197b502a2f1ad21feffb89246351549 (MD5) LICENSE.txt: 4210 bytes, checksum: a9b0c79333bcda6d7a03cc40a8d3a9fe (MD5) Previous issue date: 2015-04-22","Embargo set by: Seth Robbins for item 80009 Lift date: 2017-07-22T22:46:21Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited Restriction Lifted for Item 80009 on 2017-07-23T09:15:25Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells"]}]}],"canonical_facts":{"dc:contributor":["Li, Xiuling","Lyding, Joseph W.","Carney, Paul S.","Dragic, Peter D"],"dc:creator":["Bassett, Kevin Paul"],"dc:date":["2015-07-22T22:45:47Z","2017-07-23T09:15:25Z","2015-05","2015-04-22","2015-5"],"dc:description":["Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.","Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2017-05-01","The student, Kevin Bassett, accepted the attached license on 2015-04-21 at 18:34.","The student, Kevin Bassett, submitted this Dissertation for approval on 2015-04-21 at 18:46.","This Dissertation was approved for publication on 2015-04-22 at 16:43.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8003 on 2015-07-22 at 14:26:02","Made available in DSpace on 2015-07-22T22:45:47Z (GMT). No. of bitstreams: 2 BASSETT-DISSERTATION-2015.pdf: 18239038 bytes, checksum: 0197b502a2f1ad21feffb89246351549 (MD5) LICENSE.txt: 4210 bytes, checksum: a9b0c79333bcda6d7a03cc40a8d3a9fe (MD5) Previous issue date: 2015-04-22","Embargo set by: Seth Robbins for item 80009 Lift date: 2017-07-22T22:46:21Z Reason: Author requested closed access (OA after 2yrs) in Vireo ETD system","Limited Restriction Lifted for Item 80009 on 2017-07-23T09:15:25Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/78768"],"dc:language":["en"],"dc:rights":["Copyright 2015 Kevin Paul Bassett"],"dc:subject":["nanowire","epitaxy","metalorganic chemical vapor deposition (MOCVD)","compound semiconductors"],"dc:title":["Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:12Z"}