Low Frequency Noise in Semiconductors and Metals (Statistics, Gaussian (Noise)

Properties of l/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential of the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on small (('(TURN))1(mu)m('2) surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for l/f noise in Si and GaAs are developed in light of these results.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Restle, Phillip John

• Physics, Condensed Matter

Language dc:language

eng

Identifier

(UMI)AAI8610974

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/77388