{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/77388"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/77388","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Low Frequency Noise in Semiconductors and Metals (Statistics, Gaussian (Noise)","abstract":"Properties of l/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential of the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on small (('(TURN))1(mu)m('2) surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for l/f noise in Si and GaAs are developed in light of these results.","abstract_html":"Properties of l/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential of the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on small (('(TURN))1(mu)m('2) surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. 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