Back to results
University of Illinois at Urbana-Champaign
Raman Scattering Studies of Aluminum-Gallium - Arsenide Based Semiconductor Superlattices (Phonons, Interfaces)
Abstract
dc:descriptionRaman scattering measurements have been made on more than twenty semiconductor superlattices, all grown by molecular beam epitaxy and based on the Al(,x)Ga(,1-x)As system. The samples consist of undoped layers with alternating values of x along the {001} direction, and have periods ranging from 20(ANGSTROM) to 200(ANGSTROM). The data include a variety of scattering geometries, temperatures, and resonant and non-resonant laser excitation.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Physics
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Colvard, Carl Edward
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8409759
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/77357