Raman Scattering Studies of Aluminum-Gallium - Arsenide Based Semiconductor Superlattices (Phonons, Interfaces)
type: CreativeWork
description: Raman scattering measurements have been made on more than twenty semiconductor superlattices, all grown by molecular beam epitaxy and based on the Al(,x)Ga(,1-x)As system. The samples consist of undoped layers with alternating values of x along the {001} direction, and have periods ranging from 20(ANGSTROM) to 200(ANGSTROM). The data include a variety of scattering geometries, temperatures, and resonant and non-resonant laser excitation.
abstract: Raman scattering measurements have been made on more than twenty semiconductor superlattices, all grown by molecular beam epitaxy and based on the Al(,x)Ga(,1-x)As system. The samples consist of undoped layers with alternating values of x along the {001} direction, and have periods ranging from 20(ANGSTROM) to 200(ANGSTROM). The data include a variety of scattering geometries, temperatures, and resonant and non-resonant laser excitation.
author: Colvard, Carl Edward
language: eng
keywords: Physics, Condensed Matter
date published: 2015-05-13T15:41:38Z
date modified: 2026-07-22T22:26:10Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/77357