Raman Scattering Studies of Aluminum-Gallium - Arsenide Based Semiconductor Superlattices (Phonons, Interfaces)
Raman scattering measurements have been made on more than twenty semiconductor superlattices, all grown by molecular beam epitaxy and based on the Al(,x)Ga(,1-x)As system. The samples consist of undoped layers with alternating values of x along the {001} direction, and have periods ranging from 20(ANGSTROM) to 200(ANGSTROM). The data include a variety of scattering geometries, temperatures, and resonant and non-resonant laser excitation.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign