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University of Illinois at Urbana-Champaign
Properties of Silicon - Silicon-Dioxide Interface States in Thin-Oxide Mos (metal-Oxide Semiconductor) Structures
Abstract
dc:descriptionMade available in DSpace on 2015-05-12T22:38:52Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317191.PDF: 5032878 bytes, checksum: 5a2c0456921a996696db9958e93ad39c (MD5) Previous issue date: 1972
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Physics
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Eaton, Dennis Hammond
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (UMI)AAI7317191
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/76935