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Showing 1 to 20 of 26 for “"interface states"”.
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Influence of SiNx/Si interface states on Si solar cells
Impact of the SiN_x/n^+-Si interface on silicon solar cell performance was investigated, where SiN_x is used as a passivation layer. Significant shifts in capacitance, conductance and leakage current characteristics were observed for metal/SiN:H/n^+-Si MOS capacitor when it was subjected to a …
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Photon-assisted spectroscopy of electronic interface states in perovskite oxide heterostructures
… and density of intrinsic or extrinsic electronic interface states across the device structure. The present thesis focuses on the identification and characterization of such electronic properties by two different photoassisted spectroscopy techniques: surface photovoltage spectroscopy and …
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Oxide Charge Traps and Interface States at the Silicon - Silicon-Dioxide Interface
Made available in DSpace on 2015-05-13T15:22:19Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 8009184.PDF: 5184720 bytes, checksum: 9aa13487b79c46fe3257d939d46ae56b (MD5) Previous issue date: 1979
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Oxide charge traps and interface states at the silicon-silicon dioxide interface
… electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or holes are injected by applying the appropriate voltage to the gate. The charge trapped at the interface was measured by the capacitance-voltage method …
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Properties of Silicon - Silicon-Dioxide Interface States in Thin-Oxide Mos (metal-Oxide Semiconductor) Structures
Made available in DSpace on 2015-05-12T22:38:52Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7317191.PDF: 5032878 bytes, checksum: 5a2c0456921a996696db9958e93ad39c (MD5) Previous issue date: 1972
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An investigation of border traps and interface states in high-k/InGaAs metal-oxide-semiconductor systems
… into border traps (or charge trapping) and interface states, both of which can induce device instability, in HfO2/InGaAs and Al2O3/InGaAs metal-oxidesemiconductor (MOS) structures was carried out with an emphasis on the characterization of border traps using capacitance-voltage (C-V) …
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Surface-interface states and the Hall effect measurement of epitaxial and semi-insulating liquid-encapsulated Czochralski gallium arsenide
… and hydrogen peroxide to modify the surface-interface state distribution. The experimental results for epitaxial GaAs are shown to be well-explained by a mathematical model based on the advanced unified defect (AUD) model of the surface-interface states. The same surface-interface state model …
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Negative bias temperature instability (NBTI) experiment
… CMOS transistors can lead to the generation of interface states at the junction of the gate oxide and the transistor channel. The hydrogen that normally passivates the interface states can diffuse away from the interface. As a result, the threshold voltage and transconductance will change. These …
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Role of sulfur in vibration spectra and bonding and electronic structure of GeSi surfaces and interfaces
… and electronic structure of surfaces and interfaces using germanium. Initially, we investigated the H2S and H2Opassivated germanium surfaces. A supercell approach is used with the local density (LDA), generalized gradient (GGA) approximations and van der Waals (vdW) interactions. The …
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Development of characterization techniques for negative bias temperature instabilities
… (IL) and they do not pile up at the HfSiON/(IL) interface. Evaluating the conventional threshold voltage shift measured by extrapolating transfer characteristics, ? Vth( ex), underestimates the NBTI-induced degradation of drain current, ?ld. In this project we proposed the effective threshold …
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
One of the major defects that contribute to the interface states in the silicon band gap is the dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron …
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The physics of multilayer topological insulator heterostructures using low-energy models
… results arising from the position-dependent TI interface model are found. For the first time, this method is incorporated into a density-functional theory (DFT) solver in order to study the self-consistent charge density in multilayer TI heterostructures due to the interface states. The thesis …
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Radiation effects in metal-oxide-semiconductor capacitors
… a detailed investigation of charge trapping and interface state generation in such MOSCs due to various radiations has revealed evidence of neutron induced interface states, and of the generation of positive oxide charge in devices due to all of the radiations tested. In particular, the greater …
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The Effects of High Pressure on The Photovoltage Spectrum of Cadmium-Sulfide and Cadmium-Selenide Schottky Diodes
… is due to excitation of electrons from interface states to the conduction band of the semiconductor. A model where the interaction of the diode contact metal with the semiconductor surface gives rise to a sub-band of interface energy levels is used to explain the low energy response. …
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Emerging phenomena in oxide heterostructures
Oxide interfaces have attracted considerable attention in recent years due to emerging novel properties that do not exist in the corresponding parent compounds. Furthermore, modern atomic-scale growth and probe techniques enable the formation and study of new artificial interface states distinct …
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High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions
… while at intermediate biases tunneling into interface states is identified in p-typesilicon junctions. At high biases both silicon and aluminum junctions display behavior which cannot be understood within the framework of the average potential barrier model; in particular, aluminum junctions …
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Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
… formation of a high quality germanium-dielectric interface remains a serious challenge. High-k dielectrics deposited directly on germanium exhibit poor physical and electrical properties so an interfacial layer is required. Proposed interlayers include GeON, Si, and metal nitrides such as AIN and …
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High resolution algorithms for the Navier Stokes equations for generalized descretizations
… fluxes and correspond to the right and left interface states needed for the solution of a Riemann problem. The third reconstruction is used to evaluate the viscous fluxes. The gradient terms that appear in the viscous fluxes are formed by simply differentiating the polynomial. By selecting …
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Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
… levels of defect densities at the high-k/III-V interface, which prevents surface inversion of the semiconductor. The work presented in this PhD thesis details the characterization of MOS devices incorporating high-k dielectrics on III-V semiconductors. The analysis examines the effect of …
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Carrier dynamics of ErAs:GaBixAs1-x using infrared pump, terahertz probe spectroscopy.
… localization, and ErAs-related bound and interface states. The interplay among these components leads to competing pathways for carrier relaxation. While carrier dynamics in GaBiAs and ErAs:GaAs have been studied extensively, dynamics in the composite material ErAs:GaBiAs, with both ErAs …
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