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University of Illinois at Urbana-Champaign
Modeling and Characterization of Heterojunction Bipolar Transistors
Abstract
dc:descriptionHeterojunction bipolar transistor (HBTs) offer several advantages over their homo-junction counterparts resulting from the use of semiconductors in the emitter and base with different bandgaps. These advantages include high current gain, large cut-off frequency and short gate delay in digital logic circuits. This thesis selects a few important and critical issues connected with the operation of HBTs with a view to provide a clear and comprehensive understanding thereof.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Mazhari, Baquer
- Contributors dc:contributor
-
- Morkoc, Hadis
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI9411712
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/72017