A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates

A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence properties, and thermal stability were investigated. A 1.265-μn photoluminescence peak wavelength was observed from a 36-A ((InAs)$\sb1$/(GaAs)$\sb1$SPS) /GaAs quantum-well structure at room temperature.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Roan, Eel-Jye

Contributors dc:contributor

• Cheng, Keh-Yung

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Identifier

(UMI)AAI9329148

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/72005