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Showing 1 to 20 of 323 for “"Arsenide"”.

  1. Manganese diffusion in gallium arsenide, aluminum gallium arsenide, and gallium arsenide-aluminum gallium arsenide heterostructures

    Wu, Chih-HsyongUniversity of Illinois at Urbana-Champaign2011

    While Zn, Be, C, and Mg have been commonly used as p-type dopants in GaAs, Mn has not due to reports for which the data has demonstrated non-uniform diffusion, low surface concentration and the degradation of GaAs surface associated with Mn diffusion. A Mn concentration of 2 $\times$ 10$\sp{18}$ …

    uiuc Repository record

  2. Indium Gallium Arsenide-Gallium Arsenide-Aluminum Gallium Arsenide Strained-Layer Lasers and Laser Arrays

    Beernink, Kevin JohnUniversity of Illinois at Urbana-Champaign2014

    Several characteristics of In$\sb{x}$Ga$\sb{1-x}$As-GaAs-Al$\sb{y}$Ga$\sb{1-y}$As separate confinement heterostructure strained-layer quantum well lasers are investigated in this work. The main implications of strain are examined briefly, including the importance of a critical layer thickness, …

    uiuc Repository record

  3. Strained-Layer Indium Gallium Arsenide-Gallium Arsenide-Aluminum Galium Arsenide Photonic Devices by Metalorganic Chemical Vapor Deposition

    Osowski, Mark LouisUniversity of Illinois at Urbana-Champaign2015

    In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of …

    uiuc Repository record

  4. Reliability and Mode Behavior of Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum Well Heterostructure Lasers

    Kellogg, David AndrewUniversity of Illinois at Urbana-Champaign2015

    Data are presented on ten-stripe AlxGa1-xAs-GaAs-In yGa1-yAs quantum well heterostructure edge-emitting lasers showing results of stochastic recoupling of the laser at the Fabry-Perot interface. Scattering by epoxy or oil embedded with Al2O3 polishing compound or 10-mum diameter Al powder results …

    uiuc Repository record

  5. Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices

    Klem, John FrederickUniversity of Illinois at Urbana-Champaign2014

    Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ films and GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ across its entire …

    uiuc Repository record

  6. Resonance Raman Scattering Studies of Gallium-Arsenide - Aluminum-Arsenide Superlattices

    Gant, Thomas AndrewUniversity of Illinois at Urbana-Champaign2015

    We have made resonance Raman scattering studies of folded LA phonons and quantized LO phonons in several GaAs-AlAs superlattices. The motivation for this work was to study the electronic structure and the electron-phonon interaction in these structures. The samples were not intentionally doped. The …

    uiuc Repository record

  7. Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers

    Coleman, James JosephUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:13Z (GMT). No. of bitstreams: 1 7606730.pdf: 2847725 bytes, checksum: 538397f02a07c1415ab059d85212392e (MD5) Previous issue date: 1975

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  8. Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition

    Chung, TheodoreUniversity of Illinois at Urbana-Champaign2015

    Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize …

    uiuc Repository record

  9. Annealing Studies of Beryllium in Gallium-Arsenide and Gallium Arsenide Phosphide

    McLevige, William VictorUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:49Z (GMT). No. of bitstreams: 1 7811267.pdf: 3853791 bytes, checksum: a0f2801cbd42501b2dbbe4b3a6d222d7 (MD5) Previous issue date: 1978

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  10. Aluminum Gallium Arsenide / Gallium Arsenide Heterojunction Phototransistors for Fiber-Optic Communications

    Milano, Raymond AnthonyUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:55:08Z (GMT). No. of bitstreams: 1 8009108.pdf: 3346923 bytes, checksum: da74c95de718b6d1823ca180b76d249e (MD5) Previous issue date: 1979

    uiuc Repository record

  11. Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide

    Wolford, Donald James, Jr.University of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:55:11Z (GMT). No. of bitstreams: 1 8009215.pdf: 14760264 bytes, checksum: 3f036ee1b4df72f7e4d97b2045a7536b (MD5) Previous issue date: 1979

    uiuc Repository record

  12. Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recombination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide

    Campbell, Joe CharlesUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:39:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7411966.PDF: 3851014 bytes, checksum: cd1a4a475e1514b2d5520a344358ec96 (MD5) Previous issue date: 1973

    uiuc Repository record

  13. Indium Gallium Arsenide and Indium Arsenide Phosphide Injection Lasers and Radiative Recomination in Nitrogen-Zinc-Doped Gallium Arsenide Phosphide

    Campbell, Joe Charles2011

    Submitted by Jesse Garrison (jagarris@illinois.edu) on 2011-11-14T19:00:55Z No. of bitstreams: 1 1973_campbell.pdf: 4175372 bytes, checksum: ed3da0d70330dce9e8d913abbf574623 (MD5)

    uiuc Repository record

  14. A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates

    Roan, Eel-JyeUniversity of Illinois at Urbana-Champaign2014

    A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence properties, and thermal stability were investigated. A 1.265-$\mu$n …

    uiuc Repository record

  15. Lifetime Spectra of Gallium Arsenide-Phosphide and Nitrogen-Doped Gallium Arsenide-Phosphide

    Lee, Michael H.University of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:39:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7511795.PDF: 4228710 bytes, checksum: b6bf26e7d08a16c7f80c48cf235d52c1 (MD5) Previous issue date: 1974

    uiuc Repository record

  16. Acceptor Behavior of Implanted Beryllium in Gallium-Arsenide and Gallium Arsenide-Phosphide

    Chatterjee, Pallab KumarUniversity of Illinois at Urbana-Champaign2014

    Made available in DSpace on 2014-12-12T20:54:22Z (GMT). No. of bitstreams: 1 7624056.pdf: 6487442 bytes, checksum: 2c2f82ebf4bd3de34fb997cc35bb9693 (MD5) Previous issue date: 1976

    uiuc Repository record

  17. Lifetime spectra of gallium arsenide phosphide and nitrogen-doped gallium arsenide phosphide

    Lee, Michael H.2012

    Submitted by William Weathers (weathrs2@illinois.edu) on 2012-04-18T21:10:02Z No. of bitstreams: 1 1974_lee.pdf: 4550212 bytes, checksum: 90dd9031c1f8520031f387a0967a1e6a (MD5)

    uiuc Repository record

  18. Electrochemistry of Gallium-Arsenide

    Benard, David JamesUniversity of Illinois at Urbana-Champaign2015

    Made available in DSpace on 2015-05-12T22:38:50Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 7309878.PDF: 3310882 bytes, checksum: 28d84dc2c6a3cc89e5739272a5e57051 (MD5) Previous issue date: 1972

    uiuc Repository record

  19. Gallium Arsenide Platelet Lasers

    Rossi, Jon AlexanderUniversity of Illinois at Urbana-Champaign2014

    123 p.

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  20. Electroreflectance of gallium arsenide

    Pond, Stephen Fullerton2012

    … electroreflectance spectrum of n-type gallium arsenide in the 1.2 - 5.3 eV photon energy range has been measured. The 6e l and 6e2 l1neshapes of six different critical points were analyzed in detail by fitting the one-electron Frapz-Keldysh-Aspnes theory to each separate critical point …

    uiuc Repository record

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