Growth and Characterization of Carbon-Doped Aluminum(x) Gallium(1-X) Arsenide and Aluminum(x) Gallium(1-X) Phosphide

Carbon-doped GaAs and Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As with carbon concentrations ranging from 2 $\times$ 10$\sp $ cm$\sp{-3}$ to 3 $\times$ 10$\sp{20}$ cm$\sp{-3}$ have been characterized with Hall effect measurements, secondary ion mass spectrometry (SIMS), double crystal x-ray diffraction and nuclear reaction analysis in an ion channeling geometry. It was revealed that the surface morphology and elemental composition of p$\sp+$ Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As were critically dependent on the growth conditions due to the existence of a chemical reaction (etching) with the byproducts of the CCl$\sb4$ source. This "etching" effect was also observed during the growth of p-type Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$P by MOCVD using CCl$\sb4$ as the dopant source. The hole concentration obtained from MOCVD grown Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$P using CCl$\sb4$ is at least an order of magnitude lower than the reported concentrations in films grown by MOMBE.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Hofler, Gloria Emilia

Contributors dc:contributor

• Hsieh, K.C.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter

Identifier

(UMI)AAI9329058

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/72002