Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes

In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and conductivity type (p/n) on oxidation growth rate is investigated by examining the temperature and time dependence of various Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As and In$\sb{0.5}$(Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$)$\sb{0.5}$P samples.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Kish, Frederick Anthony, Jr

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI9305584

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71981