{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/71981"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/71981","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes","abstract":"In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and conductivity type (p/n) on oxidation growth rate is investigated by examining the temperature and time dependence of various Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As and In$\\sb{0.5}$(Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P samples.","abstract_html":"In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and conductivity type (p/n) on oxidation growth rate is investigated by examining the temperature and time dependence of various Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As and In$\\sb{0.5}$(Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P samples.","abstract_has_math":true,"creators":["Kish, Frederick Anthony, Jr"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-16T22:22:59Z","date_published":"2014-12-16T22:22:59Z","updated_at":"2026-07-22T22:26:05Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI9305584"],"render_values":[{"text":"(UMI)AAI9305584","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/71981","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Kish, Frederick Anthony, Jr"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-16T22:22:59Z","10000-01-01","1992"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/71981","(UMI)AAI9305584"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and conductivity type (p/n) on oxidation growth rate is investigated by examining the temperature and time dependence of various Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As and In$\\sb{0.5}$(Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P samples.","Device-quality insulating oxides are demonstrated in the In(AlGa)P system and are employed for current confinement in stripe-geometry gain-guided In$\\sb{0.5}$(Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P laser diodes. The insulating properties and low refractive index (n $\\sim$ 1.6) of the AlGaAs native oxide are employed to fabricate high performance planar native-oxide Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructure (QWH) index-guided laser diodes. The low index of the native oxide may also be employed to form continuously adjustable, large, lateral index steps in a planar form. These properties make feasible the fabrication of planar native-oxide Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs QWH ring laser diodes.","Made available in DSpace on 2014-12-16T22:22:59Z (GMT). No. of bitstreams: 1 9305584.pdf: 2570945 bytes, checksum: d290046fcf219c52bd3303160a42703c (MD5) Previous issue date: 1992","Embargo set by: Seth Robbins for item 72147 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","108 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992."]},{"key":"dc:title","label":"Title","values":["Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, Nick, Jr."],"dc:creator":["Kish, Frederick Anthony, Jr"],"dc:date":["2014-12-16T22:22:59Z","10000-01-01","1992"],"dc:description":["In these experiments, water vapor oxidation of Al-bearing III-V semiconductors is employed to form high quality native oxides. The oxides are examined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). The effect of the semiconductor composition and conductivity type (p/n) on oxidation growth rate is investigated by examining the temperature and time dependence of various Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As and In$\\sb{0.5}$(Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P samples.","Device-quality insulating oxides are demonstrated in the In(AlGa)P system and are employed for current confinement in stripe-geometry gain-guided In$\\sb{0.5}$(Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$)$\\sb{0.5}$P laser diodes. The insulating properties and low refractive index (n $\\sim$ 1.6) of the AlGaAs native oxide are employed to fabricate high performance planar native-oxide Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum well heterostructure (QWH) index-guided laser diodes. The low index of the native oxide may also be employed to form continuously adjustable, large, lateral index steps in a planar form. These properties make feasible the fabrication of planar native-oxide Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs QWH ring laser diodes.","Made available in DSpace on 2014-12-16T22:22:59Z (GMT). No. of bitstreams: 1 9305584.pdf: 2570945 bytes, checksum: d290046fcf219c52bd3303160a42703c (MD5) Previous issue date: 1992","Embargo set by: Seth Robbins for item 72147 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","108 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1992."],"dc:identifier":["http://hdl.handle.net/2142/71981","(UMI)AAI9305584"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Native Oxides on Aluminum-Bearing Iii-V Semiconductors With Applications to High-Performance Laser Diodes"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:05Z"}