X-Ray Diffraction Studies of Palladium-Silicide Thin Films

The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic structure and impurity levels were analyzed. The film stresses in Pd(,2)Si layers grown at 250(DEGREES)C were determined for initial Pd thicknesses 50-750 (ANGSTROM).

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Metallurgical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Coulman, Betty Ann

• Engineering, Materials Science

Identifier

(UMI)AAI8511600

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71815