{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/71815"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/71815","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"X-Ray Diffraction Studies of Palladium-Silicide Thin Films","abstract":"The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic structure and impurity levels were analyzed. The film stresses in Pd(,2)Si layers grown at 250(DEGREES)C were determined for initial Pd thicknesses 50-750 (ANGSTROM).","abstract_html":"The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic structure and impurity levels were analyzed. The film stresses in Pd(,2)Si layers grown at 250(DEGREES)C were determined for initial Pd thicknesses 50-750 (ANGSTROM).","abstract_has_math":false,"creators":["Coulman, Betty Ann"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Metallurgical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-16T20:51:59Z","date_published":"2014-12-16T20:51:59Z","updated_at":"2026-07-22T22:26:05Z","subjects":["Engineering, Materials Science"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8511600"],"render_values":[{"text":"(UMI)AAI8511600","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/71815","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Coulman, Betty Ann"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-16T20:51:59Z","10000-01-01","1985"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Metallurgical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/71815","(UMI)AAI8511600"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic structure and impurity levels were analyzed. The film stresses in Pd(,2)Si layers grown at 250(DEGREES)C were determined for initial Pd thicknesses 50-750 (ANGSTROM).","Made available in DSpace on 2014-12-16T20:51:59Z (GMT). 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