Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions

GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Metallurgical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Barnett, Scott Alexander

• Engineering, Materials Science

Identifier

(UMI)AAI8302799

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/71793