{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/71793"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/71793","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions","abstract":"GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.","abstract_html":"GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.","abstract_has_math":false,"creators":["Barnett, Scott Alexander"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Metallurgical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-16T20:51:48Z","date_published":"2014-12-16T20:51:48Z","updated_at":"2026-07-22T22:26:05Z","subjects":["Engineering, Materials Science"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8302799"],"render_values":[{"text":"(UMI)AAI8302799","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/71793","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Barnett, Scott Alexander"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-16T20:51:48Z","10000-01-01","1982"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Metallurgical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/71793","(UMI)AAI8302799"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.","Made available in DSpace on 2014-12-16T20:51:48Z (GMT). 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Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.","Made available in DSpace on 2014-12-16T20:51:48Z (GMT). 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