Reaction and Transport of Multiple Species During Plasma Etching

The nature of transport and reaction of multiple species in plasma reactors was analyzed in order to determine the effect of operating conditions and design variables upon the etch rate distribution and throughput. Epoxy and photoresist films on closely-spaced silicon wafers were etched by reactive species generated in a 13.56 MHz O$\sb2$/CF$\sb4$ plasma, which was confined from direct contact with the substrates. Additionally, epoxy drill smear was etched from the sidewalls of holes drilled in multilayer printed wiring boards.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Chemical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Folta, James Allen

Contributors dc:contributor

• Alkire, Richard C.

• Engineering, Chemical
• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908680

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69798