{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69798"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69798","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Reaction and Transport of Multiple Species During Plasma Etching","abstract":"The nature of transport and reaction of multiple species in plasma reactors was analyzed in order to determine the effect of operating conditions and design variables upon the etch rate distribution and throughput. Epoxy and photoresist films on closely-spaced silicon wafers were etched by reactive species generated in a 13.56 MHz O$\\sb2$/CF$\\sb4$ plasma, which was confined from direct contact with the substrates. Additionally, epoxy drill smear was etched from the sidewalls of holes drilled in multilayer printed wiring boards.","abstract_html":"The nature of transport and reaction of multiple species in plasma reactors was analyzed in order to determine the effect of operating conditions and design variables upon the etch rate distribution and throughput. Epoxy and photoresist films on closely-spaced silicon wafers were etched by reactive species generated in a 13.56 MHz O$\\sb2$/CF$\\sb4$ plasma, which was confined from direct contact with the substrates. Additionally, epoxy drill smear was etched from the sidewalls of holes drilled in multilayer printed wiring boards.","abstract_has_math":true,"creators":["Folta, James Allen"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Chemical Engineering","degree_department":null,"school":null,"contributors":["Alkire, Richard C."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:54:46Z","date_published":"2014-12-15T19:54:46Z","updated_at":"2026-07-22T22:26:01Z","subjects":["Engineering, Chemical","Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8908680"],"render_values":[{"text":"(UMI)AAI8908680","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69798","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Alkire, Richard C."]},{"key":"dc:creator","label":"Author","values":["Folta, James Allen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:54:46Z","10000-01-01","1988"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Chemical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Chemical","Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69798","(UMI)AAI8908680"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The nature of transport and reaction of multiple species in plasma reactors was analyzed in order to determine the effect of operating conditions and design variables upon the etch rate distribution and throughput. Epoxy and photoresist films on closely-spaced silicon wafers were etched by reactive species generated in a 13.56 MHz O$\\sb2$/CF$\\sb4$ plasma, which was confined from direct contact with the substrates. Additionally, epoxy drill smear was etched from the sidewalls of holes drilled in multilayer printed wiring boards.","Experiments were performed to examine the chemistry of the etching reactions in the absence of mass transport, followed by studies in which transport and reaction of the etchant species were coupled. Plasma and etching diagnostic techniques included X-ray photoelectron spectroscopy (XPS or ESCA), optical emission spectroscopy (OES), mass spectroscopy, and multi-channel laser interferometry. A mathematical model describing diffusion of etchant species and reaction at the substrate surface was formulated for comparison with the experimental results.","Experimental and theoretical results indicated that increased CF$\\sb4$ content in the feed stream served to fluorinate the more-accessible regions of polymer to a greater extent than the less-accessible regions. Such behavior served to suppress the etch rate in the more-accessible regions and enhance the etch rate in the less-accessible regions, thereby improving etch rate uniformity and reactor throughput significantly, both for closely-spaced wafers and for the removal of epoxy drill smear from holes in printed wiring boards.","Made available in DSpace on 2014-12-15T19:54:46Z (GMT). No. of bitstreams: 1 8908680.pdf: 6075476 bytes, checksum: e04da7c0adf268b639bdfab98e2d964f (MD5) Previous issue date: 1988","Embargo set by: Seth Robbins for item 69964 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","190 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988."]},{"key":"dc:title","label":"Title","values":["Reaction and Transport of Multiple Species During Plasma Etching"]}]}],"canonical_facts":{"dc:contributor":["Alkire, Richard C."],"dc:creator":["Folta, James Allen"],"dc:date":["2014-12-15T19:54:46Z","10000-01-01","1988"],"dc:description":["The nature of transport and reaction of multiple species in plasma reactors was analyzed in order to determine the effect of operating conditions and design variables upon the etch rate distribution and throughput. Epoxy and photoresist films on closely-spaced silicon wafers were etched by reactive species generated in a 13.56 MHz O$\\sb2$/CF$\\sb4$ plasma, which was confined from direct contact with the substrates. Additionally, epoxy drill smear was etched from the sidewalls of holes drilled in multilayer printed wiring boards.","Experiments were performed to examine the chemistry of the etching reactions in the absence of mass transport, followed by studies in which transport and reaction of the etchant species were coupled. Plasma and etching diagnostic techniques included X-ray photoelectron spectroscopy (XPS or ESCA), optical emission spectroscopy (OES), mass spectroscopy, and multi-channel laser interferometry. A mathematical model describing diffusion of etchant species and reaction at the substrate surface was formulated for comparison with the experimental results.","Experimental and theoretical results indicated that increased CF$\\sb4$ content in the feed stream served to fluorinate the more-accessible regions of polymer to a greater extent than the less-accessible regions. Such behavior served to suppress the etch rate in the more-accessible regions and enhance the etch rate in the less-accessible regions, thereby improving etch rate uniformity and reactor throughput significantly, both for closely-spaced wafers and for the removal of epoxy drill smear from holes in printed wiring boards.","Made available in DSpace on 2014-12-15T19:54:46Z (GMT). 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