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University of Illinois at Urbana-Champaign
Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges
Abstract
dc:descriptionThe reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Nordheden, Karen Jean
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8908791
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69417