{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69417"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69417","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges","abstract":"The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.","abstract_html":"The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.","abstract_has_math":false,"creators":["Nordheden, Karen Jean"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:41Z","date_published":"2014-12-15T19:05:41Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8908791"],"render_values":[{"text":"(UMI)AAI8908791","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69417","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Nordheden, Karen Jean"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:41Z","10000-01-01","1988"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69417","(UMI)AAI8908791"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.","Made available in DSpace on 2014-12-15T19:05:41Z (GMT). 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The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.","Made available in DSpace on 2014-12-15T19:05:41Z (GMT). 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