Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor

Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Henderson, Timothy Scott

• Engineering, Electronics and Electrical

Identifier

(UMI)AAI8908705

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/69411