{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69411"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69411","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor","abstract":"Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.","abstract_html":"Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.","abstract_has_math":false,"creators":["Henderson, Timothy Scott"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:40Z","date_published":"2014-12-15T19:05:40Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8908705"],"render_values":[{"text":"(UMI)AAI8908705","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69411","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Henderson, Timothy Scott"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:40Z","10000-01-01","1988"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69411","(UMI)AAI8908705"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.","A growth technique using molecular beam epitaxy is described, with particular attention paid to the growth and optimization of the (In,Ga)As channel layer. Sheet carrier concentration, low- and midelectric field mobility and velocity-field characteristics, as well as electron saturation velocity, are determined as functions of various structural parameters, particularly InAs mole fraction. Photoreflectance measurements and theoretical calculations are used to describe the band structure in the (In,Ga)As quantum well. Finally, outstanding dc and microwave performances are demonstrated at room and cryogenic temperatures. These results indicate that the (In,Ga)As/(Al,Ga)As MODFET is a superior alternative to the GaAs metal-semiconductor field-effect transistor and GaAs/(Al,Ga)As MODFET for use as a high frequency, low noise amplifier and switch.","Made available in DSpace on 2014-12-15T19:05:40Z (GMT). No. of bitstreams: 1 8908705.pdf: 4128814 bytes, checksum: 31b5f5aa68cbddfa67210f7466c1acf0 (MD5) Previous issue date: 1988","Embargo set by: Seth Robbins for item 69577 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","129 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988."]},{"key":"dc:title","label":"Title","values":["Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor"]}]}],"canonical_facts":{"dc:creator":["Henderson, Timothy Scott"],"dc:date":["2014-12-15T19:05:40Z","10000-01-01","1988"],"dc:description":["Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.","A growth technique using molecular beam epitaxy is described, with particular attention paid to the growth and optimization of the (In,Ga)As channel layer. Sheet carrier concentration, low- and midelectric field mobility and velocity-field characteristics, as well as electron saturation velocity, are determined as functions of various structural parameters, particularly InAs mole fraction. Photoreflectance measurements and theoretical calculations are used to describe the band structure in the (In,Ga)As quantum well. Finally, outstanding dc and microwave performances are demonstrated at room and cryogenic temperatures. These results indicate that the (In,Ga)As/(Al,Ga)As MODFET is a superior alternative to the GaAs metal-semiconductor field-effect transistor and GaAs/(Al,Ga)As MODFET for use as a high frequency, low noise amplifier and switch.","Made available in DSpace on 2014-12-15T19:05:40Z (GMT). No. of bitstreams: 1 8908705.pdf: 4128814 bytes, checksum: 31b5f5aa68cbddfa67210f7466c1acf0 (MD5) Previous issue date: 1988","Embargo set by: Seth Robbins for item 69577 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","129 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988."],"dc:identifier":["http://hdl.handle.net/2142/69411","(UMI)AAI8908705"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}