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University of Illinois at Urbana-Champaign
Electronic Trapping Properties of Gold Center in Silicon
Abstract
dc:descriptionGold in silicon is studied in this thesis because of its usefulness as a recombination center as well as the controversy over the published works regarding its property as a deep level in silicon. Two major questions about the use of gold as a deep trap in silicon are (i) What are their location and configuration in the silicon crystal--substitutional, interstitial, or complex? (ii) Do the two gold levels belong to the same gold center in silicon? To have better insight, we studied the trapping rates of the gold center in both low and medium concentration substrates.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Su, Lu
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8803123
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69377