Electronic Trapping Properties of Gold Center in Silicon
type: CreativeWork
description: Gold in silicon is studied in this thesis because of its usefulness as a recombination center as well as the controversy over the published works regarding its property as a deep level in silicon. Two major questions about the use of gold as a deep trap in silicon are (i) What are their location and configuration in the silicon crystal--substitutional, interstitial, or complex? (ii) Do the two gold levels belong to the same gold center in silicon? To have better insight, we studied the trapping rates of the gold center in both low and medium concentration substrates.
abstract: Gold in silicon is studied in this thesis because of its usefulness as a recombination center as well as the controversy over the published works regarding its property as a deep level in silicon. Two major questions about the use of gold as a deep trap in silicon are (i) What are their location and configuration in the silicon crystal--substitutional, interstitial, or complex? (ii) Do the two gold levels belong to the same gold center in silicon? To have better insight, we studied the trapping rates of the gold center in both low and medium concentration substrates.
author: Su, Lu
keywords: Engineering, Electronics and Electrical
date published: 2014-12-15T19:05:26Z
date modified: 2026-07-22T22:26:00Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/69377