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University of Illinois at Urbana-Champaign
Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)
Abstract
dc:descriptionThe effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Meehan, Kathleen
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8600266
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69327