{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/69327"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/69327","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)","abstract":"The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.","abstract_html":"The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.","abstract_has_math":false,"creators":["Meehan, Kathleen"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-15T19:05:05Z","date_published":"2014-12-15T19:05:05Z","updated_at":"2026-07-22T22:26:00Z","subjects":["Engineering, Electronics and Electrical"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8600266"],"render_values":[{"text":"(UMI)AAI8600266","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/69327","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Meehan, Kathleen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-15T19:05:05Z","10000-01-01","1985"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/69327","(UMI)AAI8600266"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.","Diffusion of Zn or Si has been found to cause interdiffusion of both of the Column III constituents (Al and Ga) and possibly both of the Column V constituents (P and As). This behavior, which yields layer disordering, occurs at lower temperatures than the temperature required for ordinary thermal disordering. With proper masking techniques, the layer intermixing (i.e., Al-Ga interdiffusion in Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures) can be accomplished selectively, thus raising the effective band gap of the diffused region. This process has been successfully used to define stripe-geometry buried heterostructure laser diodes.","Made available in DSpace on 2014-12-15T19:05:05Z (GMT). No. of bitstreams: 1 8600266.pdf: 3052186 bytes, checksum: b18c348f98df502c559ae4ad6b548355 (MD5) Previous issue date: 1985","Embargo set by: Seth Robbins for item 69493 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","117 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985."]},{"key":"dc:title","label":"Title","values":["Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)"]}]}],"canonical_facts":{"dc:creator":["Meehan, Kathleen"],"dc:date":["2014-12-15T19:05:05Z","10000-01-01","1985"],"dc:description":["The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.","Diffusion of Zn or Si has been found to cause interdiffusion of both of the Column III constituents (Al and Ga) and possibly both of the Column V constituents (P and As). This behavior, which yields layer disordering, occurs at lower temperatures than the temperature required for ordinary thermal disordering. With proper masking techniques, the layer intermixing (i.e., Al-Ga interdiffusion in Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures) can be accomplished selectively, thus raising the effective band gap of the diffused region. This process has been successfully used to define stripe-geometry buried heterostructure laser diodes.","Made available in DSpace on 2014-12-15T19:05:05Z (GMT). No. of bitstreams: 1 8600266.pdf: 3052186 bytes, checksum: b18c348f98df502c559ae4ad6b548355 (MD5) Previous issue date: 1985","Embargo set by: Seth Robbins for item 69493 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","117 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985."],"dc:identifier":["http://hdl.handle.net/2142/69327","(UMI)AAI8600266"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:00Z"}