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University of Illinois at Urbana-Champaign
Thermally Generated Traps in Boron Implanted Phosphorus Doped Silicon (Semiconductor, Defect)
Abstract
dc:descriptionThe generation-recombination-trapping centers formed by the heat treatment of boron implanted, phosphorus doped silicon were studied using capacitance transient techniques. Measurements were made of the carrier thermal emission rates, emission cross sections, and activation energies for two thermally generated hole traps and six thermally generated electron traps. These traps do not appear to be present in the silicon immediately after implantation; they are formed by heat treatment of the damaged silicon at temperatures near 400C.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Jackson, Daniel Brian
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8600217
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69323