Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 23 for “"electron traps"”.
-
The impact of electron traps on the transfer performance of acoustic charge transport devices
… Charge Transport (ACT) devices caused by electron traps. An experimental method employing characterization of trap parameters and measurements of frequency response and pulse degradation in ACT devices is developed for evaluating the effects of trapping loss on device performance. …
-
Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy
System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deep levels in the GaAs-GaP system.
-
A study of electron traps in vapor phase epitaxial gallium arsenide grown in the presence of oxygen
… are presented. These include a reduction in free electron concentration, an increase in electron mobility, a reduction in both shallow donor and acceptor concentrations, and essentially no effect on the concentrations of electron traps. The behavior of these optical and electrical properties with …
-
A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation …
-
Structure-Composition Relationships and Their Influence on Long Luminescent Lifetimes in Persistent Luminescent Phosphors
… defects, and co-dopants, e.g., Dy3+, that form electron traps. Research has primarily focused on establishing methods to improve the long luminescent lifetimes of known persistent luminescent phosphors (PLPs) and the extension of these materials into medical diagnostic applications. However, the …
-
Infrared Spectroscopic Measurement of Titanium Dioxide Nanoparticle Shallow Trap State Energies
Within the "forbidden" range of electron energies between the valence and conduction bands of titanium dioxide, crystal lattice irregularities lead to the formation of electron trapping sites. These sites are known as shallow trap states, where "shallow" refers to the close energy proximity of …
-
Thermally Generated Traps in Boron Implanted Phosphorus Doped Silicon (Semiconductor, Defect)
… energies for two thermally generated hole traps and six thermally generated electron traps. These traps do not appear to be present in the silicon immediately after implantation; they are formed by heat treatment of the damaged silicon at temperatures near 400C.
-
Dislocation related defects in silicon and gallium nitride.
… revealed a shallow donor level, a series of deep electron traps and a thermally activated metastable hole trap. The dominant deep electron level is shown to emit around room temperature. DLTS and Laplace DLTS results indicate that this level exhibits local band-bending and is likely to arise from …
-
Modeling and optimization of the transistor laser operation
… control model is introduced to provide the electron characteristics in the base of the TLs. The model shows that the quantum wells (QWs) serve as electron traps to reduce the electrical gain and produce an optical gain. Based on the analysis on the charge control model, the optical gain can …
-
The Seebeck effect in thin film CdS and ZnₓCd₁₋ₓS
… concentration as film thickness increases making electron traps at the grain boundary influential. As the zinc concentration is increased the carrier concentration decreases and the grain boundary barrier height increases as seen in the CdS films.
-
Oxide charge traps and interface states at the silicon-silicon dioxide interface
… oxidation parameters on oxide charge trapping. Electrons and holes were injected into the oxides by the VUV-bias method. In this method, electron-hole pairs are created at the gate-Si0interface by 2 irradiation with vacuum ultraviolet light of 10.2 eV photon energy. Electrons or holes are …
-
Radiation response and optical characterization of carbon based thin-films prepared by saddle field plasma enhanced chemical vapor deposition
… were studied. The optical, microstructure and electronic properties of the prepared samples were studied using Raman spectroscopy, FTIR, UV-Visible spectroscopy and I –V characteristics methods. It was found that, an increase in the hydrogen content in the gas mixture leads to a decrease in the …
-
Characterization of high-k layers as the gate dielectric for MOSFETs
… 3,4 and 5. Chapter 3 characterizes a s-grown electron traps in HfO2/SiO2s tacks. The issues addressed include the impact of measurement technique on electron trapping, contribution of different current components to trapping, trap location, and the capture cross section and trapping kinetics. …
-
Theoretical Study of Electron Transport and Trapping in Solvated Titanium Dioxide Nanoparticles
… DFT calculations, and theoretical modeling of electron transport and trapping in solvated TiO_2 nanoparticles. In first half, We implemented an OpenMP/MPI hybrid parallelization implementation of the pseudospectral algorithm, developed a fragment based initial guess methodology which is …
-
DC, RF, and Thermal Characterization of High Electric Field Induced Degradation Mechanisms in GaN-on-Si High Electron Mobility Transistors
<p>Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low …
-
Dielectric Breakdown of Silver Azide
… from the anode combine bi-molecularly via traps and produce N2. Some of the electrons from the cathode arc localised at impurity centres or defects . The discharge of mobile Ag+ at the electron traps results in silver atoms which, if formed on the surface , may migrate as well as aggregate …
-
Effects of ion processing and substrate variables on electrical characteristics of GaAs
… (100) and (211) substrate orientations. Several electron traps are identified and their possible origins discussed. It is observed that (211) GaAs, after Si-implantation and RTA, has higher residual damage than (100) oriented GaAs. The electrical properties of active GaAs on Cr-doped and undoped …
-
Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
<p>Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike …
-
Anodic films on Bismuth
… by microscopic observation, including scanning electron microscopy. Dissolution of the film, giving breakdown of the oxide layer and pitting of the metal, was an important phenomenon. It became particularly significant for pH <8. The thickness attained by the anodic bismuth oxide layer was …
Page 1 of 2